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SiZ710DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
60
V GS = 10 V thru 4 V
20
16
50
40
30
20
10
V GS = 3 V
12
8
4
T C = 25 °C
T C = 125 °C
0
V GS = 2 V
0
T C = - 55 °C
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
2.5
0.012
0.010
V DS - Drain-to-Source Voltage (V)
Output Characteristics
1200
1000
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C iss
0.008
0.006
V GS = 4.5 V
V GS = 10 V
800
600
0.004
0.002
0.000
400
200
0
C rss
C oss
0
10
20
30
40
50
60
70
0
5
10
15
20
10
I D - Drain Current (A)
On-Resistance vs. Drain Current
I D = 16 A
1.6
V DS - Drain-to-Source Voltage (V)
Capacitance
I D = 19 A
8
V DS = 10 V
1.4
6
4
2
0
V DS = 5 V
V DS = 16 V
1.2
1.0
0.8
0.6
V GS = 10 V, V GS = 4.5 V
0
3
6
9
12
15
- 50
- 25
0
25
50
75
100
125
150
www.vishay.com
4
Q g - Total Gate Charge (nC)
Gate Charge
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65733
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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